 |
Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply
Product Details:
| Place of Origin: | Dongguan China |
| Brand Name: | Uchi |
| Certification: | CE / RoHS / ISO9001 / UL |
| Model Number: | Schottky diodes |
Payment & Shipping Terms:
| Minimum Order Quantity: | Negotiation |
|---|---|
| Price: | Negotiation |
| Packaging Details: | Export package / Negotiation |
| Delivery Time: | Negotiation |
| Payment Terms: | T/T |
| Supply Ability: | 2000000 per month |
|
Detail Information |
|||
| Features: | Common Cathode Structure | Type: | Schottky Diode |
|---|---|---|---|
| Material: | Silicon | Max. Forward Current: | 30A, 30A |
| Max. Forward Voltage: | 0.9V, 0.9V | Max. Reverse Voltage: | 200V |
| Highlight: | High Efficiency Schottky Diode,UL Schottky Diode,Silicon Schottky Barrier Diode |
||
Product Description
Low Power Loss High Efficiency Schottky Diode For High Frequency Switch Power Supply
MBR10100.pdf
The Schottky diode is named after its inventor, Dr. Schottky (Schottky), and SBD is the abbreviation of Schottky Barrier Diode (Schottky Barrier Diode, abbreviated as SBD). SBD is not made by the principle of contacting P-type semiconductor and N-type semiconductor to form PN junction, but by using the principle of metal-semiconductor junction formed by contacting metal and semiconductor. Therefore, SBD is also called metal-semiconductor (contact) diode or surface barrier diode, which is a kind of hot carrier diode.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
||
