• SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation
  • SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation
  • SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation
SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

Product Details:

Place of Origin: Dongguan China
Brand Name: UCHI
Certification: Completed
Model Number: D882

Payment & Shipping Terms:

Minimum Order Quantity: 1000PCS
Price: Negotiable
Packaging Details: Standard
Delivery Time: 3weeks
Payment Terms: T/T, Western Union
Supply Ability: 5000pcs
Get Best Price Contact Now

Detail Information

Highlight:

NPN electronic transistors

,

Plastic Encapsulate electronic transistors

,

Power Dissipation electronic transistors

Product Description

SOT-89 D882 Plastic-Encapsulate Transistors

 

Features
 
Power dissipation
 
 

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55~150

 

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40     V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6     V
Collector cut-off current ICBO VCB= 40V, IE=0     1 µA
Collector cut-off current ICEO VCE= 30V, IB=0     10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0     1 µA
DC current gain hFE(1) VCE=2V, IC= 1A 60   400  
  hFE(2) VCE=2V, IC= 100mA 32      
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A     0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A     1.5 V
Transition frequency fT VCE= 5V , Ic=0.1A f =10MHz 50     MHz

 

CLASSIFICATION OF hFE(1)

 

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

Typical Characteristics

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